VIA FILLING METHOD

• Main Authors: ISHIKAWA MASAMI, HAGIWARA HIDEKI, KIMIZUKA RYOICHI
• Format: Patent
• Language: English; Korean
• Published: 25.06.2001
• Edition: 7
• Subjects: APPARATUS THEREFOR; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROFORMING; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; METALLURGY; PRINTED CIRCUITS; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE: A via filling method is provided to simply and efficiently fill a metal into the micro opening like a blind hole generated on the printed circuit board. CONSTITUTION: A via filling method consists in subjecting a substrate having blind via holes to a conducting treatment, then to plating in an acidic copper plating bath containing the following components(A) to (E): (A) 100 to 300 g/L copper sulfate, (B) 30 to 150 g/L sulfuric acid, (C) 10 to 1,000 mg/L first component(polymer component), such as polyethylene glycol, polypropylene glycol and Pluronic type surfactant, (D) 0.1 to 20 mg/L second compound(carrier component), such as sodium sulfoalkyl sulfonate and bis-sulfo organic compound, and (E) 0.05 to 10 mg/L third component(leveler component), such as polyalkylene imine, 1-hydroxyethyl-2-alkylimidazoline chloride, auramine and their derivatives. The ratio at which the holes are filled with copper is expressed by the percent obtained by dividing a plating thickness(a) by a thickness(b).