LOW DIELECTRIC MATERIALS WITH INHERENT COPPER ION MIGRATION BARRIER

• Main Authors: HEDRICK JEFFREY CURTIS, STEPHAN ALAN COEN, CLADIUS FEEGAA, SHAW JANE MARGARET
• Format: Patent
• Language: English; Korean
• Published: 15.06.2001
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A dielectric material of low permittivity is provided to reduce Cu ion migration by allowing an interlayer dielectrics to comprise a dielectric material whose permittivity is a specified value or below as well as additives, and combining the additives to the Cu ion. CONSTITUTION: An interlayer dielectrics(12) is formed on a substrate(10), comprising such semiconductor material as Si, Ge, GaAs, InAs, InP, or other III/V compound. The interlayer dielectrics(12) comprises such amount of additives as effective for combination with Cu ion, as well as a dielectrics of low permittivity which comprises polyimide, polyamide, diamond, diamond-like carbon, silicon-contained polymer, polyallylene ether, paralien polymer, and organic dielectric material of permittivity 3.0 or below. Thus, the Cu ion migration can be reduced. 본 발명은 Cu 영역을 포함하는 반도체 구조물에서 Cu 이온의 영동을 방지하기 위한 층간 유전체에 관한 것이다. 본 발명의 층간 유전체는 유전율이 3.0 이하인 유전 물질 및 Cu 이온과 고도로 결합할 수 있으면서 유전 물질에 용해될 수 있는 첨가제를 포함한다. 저유전율(κ)의 유전 물질 내에 상기 첨가제가 존재하면 SiO또는 SiN등의 종래의 무기 배리어 물질을 생략할 수 있다.