PROCESS WINDOW FOR ELECTROCHEMICAL DEPOSITION OF HIGH ASPECT RATIO STRUCTURES

PURPOSE: To provide a method for plating the surface of a substrate having an opening with a high aspect ratio with a metal without generating defects. CONSTITUTION: This plating method is executed in a solution containing a metal having a molar concentration of about 0.2 to 1.2 M, an inhibiting add...

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Bibliographic Details
Main Authors DUBOUST ALAIN, NEO SIEW, CHEN LIAN-YU, GANDIKOTA SRINIVAS, DANIEL CARL, CHEUNG ROBIN
Format Patent
LanguageEnglish
Korean
Published 15.06.2001
Edition7
Subjects
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROFORMING
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
METALLURGY
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: To provide a method for plating the surface of a substrate having an opening with a high aspect ratio with a metal without generating defects. CONSTITUTION: This plating method is executed in a solution containing a metal having a molar concentration of about 0.2 to 1.2 M, an inhibiting additive having a concentration of about 3.75 to 15 mL/L to the whole solution and an accelerating additive having a concentration of about 0.175 to 2.1 mL/L to the whole solution. The temperature of the plating solution is about < 30 deg.C.
Bibliography:Application Number: KR20000039897