Silica glass crucible and method of fabricating thereof

• Main Authors: OBATA NAOYUKI, KIMURA FUSHIKI, MIYAO ATSURO, KITANO KOZO, YAMAGUCHI HIROSHI, MISU KIYOAKI, KAWAKAMI IZUMI, TAKARIKI KAZUHIKO
• Format: Patent
• Language: English; Korean
• Published: 15.06.2001
• Edition: 7
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GLASS; MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES; METALLURGY; MINERAL OR SLAG WOOL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PURPOSE: To provide a quartz glass crucible and method for manufacturing the quartz glass crucible which enhances a single crystallization yield at the time of pulling up single crystal of silicon. CONSTITUTION: This quartz glass crucible has an α value of 0.05 or less at >= 0.5 mm thickness from an inner surface 2 of the quartz glass crucible 1 and a <= 100 ppm OH group concentration of outer peripheral side whole region outer from [ at least 1.0 mm thickness from the inner surface 2 of the quartz glass crucible 1. Here, the α value is a value obtained by dividing an integrated value of fluorescent intensity in 4,000-4,100 m-1 wave length measured with a laser Raman spectroscopy exciting a sectional plane perpendicular to a direction of thickness of the quartz glass crucible 1 with a laser beam having 514 nm wave length by an integrated value of an SiO peak of 800 cm-1 wave length. In this method for manufacturing the quartz glass crucible for pulling up single crystal of silicon, after a helium gas or argon gas is supplied into a hollow part of a crucible-shaped molding, arc fusing is started and then the supply of the helium or argon gas is stopped or reduced while continuing the arc fusing and the supply of a hydrogen gas is started before the arc fusing is stopped. 석영도가니의 내표면으로부터 0.5㎜ 이상의 두께에 걸쳐 0.05이하인 α를 가지며, 514㎚의 레이져 광선에 의한 자극을 포함하는 레이져 라만 분광법으로 석영도가니의 두께부를 처리함으로써, 결정되는 SiO피크가 나타나는 경우에 800㎝의 파장에서 통합된 형광도에 의해 파장 4,000㎝와 4,100㎝의 파장범위에서 통합된 형광도를 분배함으로써 α가 얻어지며, OH기의 농도는 석영도가니의 내표면으로부터 최소한 1.0㎜의 두께를 넘어 전체 외주면에 걸쳐서 100ppm이하이다. 단일 실리콘 결정을 위드드로우(withdraw)하기 위한 석영도가니의 준비공정은 도가니형태로 주조된 생성물의 내부로 최소의 헬륨기체나 아르곤기체를 공급하며, 그리고 나서 아르곤기체의 공급이 중지되거나 공급되는 아르곤기체의 양이 감소하고 수소기체의 공급이 시작되는 것이 종료되기 전에 아크용해가 시작되거나 계속된다.