PROCESS FOR PRODUCING METAL MASK

• Main Authors: PARK, GYEONG HO, CHOI, BU YEON, JUNG, SU HONG, JANG, BYEONG SU, KWON, HYEOK JU
• Format: Patent
• Language: English; Korean
• Published: 05.06.2001
• Edition: 7
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

PURPOSE: A process for producing a metal mask is provided, which can control critical dimension(CD) easily in detail and used in a preparation for high integrated semiconductor elements. CONSTITUTION: The process comprises the steps of: forming a metal layer(2) on a transparent substrate(1); forming a masking layer(4) on the metal layer(2), wherein the masking layer(4) has a lower etching rate against a first etching source than the metal layer(2); forming a patterned photoresist layer(3) on the masking layer(4), wherein, the photoresist layer(3) has a lower etching rate against a second etching source than the masking layer(4); etching the exposed part of the masking layer(4) with the second etching source; etching the exposed part of the metal layer(2) with the first etching source; removing the photoresist layer(3) and the masking layer(4).