PROCESS FOR PRODUCING METAL MASK

PURPOSE: A process for producing a metal mask is provided, which can control critical dimension(CD) easily in detail and used in a preparation for high integrated semiconductor elements. CONSTITUTION: The process comprises the steps of: forming a metal layer(2) on a transparent substrate(1); forming...

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Bibliographic Details
Main Authors PARK, GYEONG HO, CHOI, BU YEON, JUNG, SU HONG, JANG, BYEONG SU, KWON, HYEOK JU
Format Patent
LanguageEnglish
Korean
Published 05.06.2001
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:PURPOSE: A process for producing a metal mask is provided, which can control critical dimension(CD) easily in detail and used in a preparation for high integrated semiconductor elements. CONSTITUTION: The process comprises the steps of: forming a metal layer(2) on a transparent substrate(1); forming a masking layer(4) on the metal layer(2), wherein the masking layer(4) has a lower etching rate against a first etching source than the metal layer(2); forming a patterned photoresist layer(3) on the masking layer(4), wherein, the photoresist layer(3) has a lower etching rate against a second etching source than the masking layer(4); etching the exposed part of the masking layer(4) with the second etching source; etching the exposed part of the metal layer(2) with the first etching source; removing the photoresist layer(3) and the masking layer(4).
Bibliography:Application Number: KR19990048336