METHOD FOR MANUFACTURING CAPACITOR HAVING ELECTRODE OF CORRUGATED BOX TYPE STRUCTURE

• Main Authors: PARK, HONG BAE, KANG, CHANG SEOK
• Format: Patent
• Language: English; Korean
• Published: 15.05.2001
• Edition: 7
• Subjects: ELECTRICITY

PURPOSE: A method for manufacturing a capacitor having an electrode of a corrugated box type structure is provided to increase an effective area of a storage electrode per a unit area without etching an electrode of metal of a platinum group. CONSTITUTION: A transistor is formed on a semiconductor substrate(30). After an interlayer dielectric is formed on the transistor, A buried contact(44) connected to a source of the transistor is formed. A barrier layer(46) is formed. An isolation layer of a storage electrode(54) is formed while the quantity of doped impurities varies according to the depth of doping. The isolation layer of the storage electrode is partially etched to form an isolation layer pattern of the storage electrode by using a reverse pattern of the storage electrode. A sidewall is etched to have a corrugated shape so that a fame of the storage electrode is formed. A storage electrode material is deposited inside the frame of the storage electrode. A dielectric layer(56) is formed. A plate electrode(58) is formed.