CAPACITOR AND MANUFACTURING METHOD THEREOF

• Main Authors: KWAK, DONG HWA, HWANG, YU SANG
• Format: Patent
• Language: English; Korean
• Published: 15.05.2001
• Edition: 7
• Subjects: ELECTRICITY

PURPOSE: A capacitor and a manufacturing method thereof are to allow a lower electrode to directly contact with a landing pad without a contact plug to accomplish a simplified process and a high capacitance compared with a small area. CONSTITUTION: A substrate(210) is provided with at least one gate electrode(212), between which a landing pad(214) is formed. The landing pad consists of polysilicon or doped polysilicon. On the front of the substrate is deposited the first insulating layer(216) of O3-TEOS undoped silica glass. On the first insulating layer is formed a bit line(218) having a structure deposited with tungsten silicide on a single tungsten layer or polysilicon. On the front of the substrate is deposited the second insulating layer(220) of a silicon nitride layer(222) which is deposited on a sacrificial oxide layer consisting of at least one of undoped silica glass and boron phosphorus silica glass and which acts as an etch stopping layer with respect to an oxide layer. The insulating layers are etched in turn by a photo process to form an opening(226) until the landing pad(214) is exposed. On the exposed landing pad through the opening is formed a TiSi layer(228). The opening is deposited with metal layer on its surface so that a lower electrode(230) is created.