METHOD FOR FORMING INSULATING FILM AND DEVICE THEREFOR
PURPOSE: A method for forming an insulating film and a device therefor are provided to obtain an excellent electric characteristic by reducing accumulation of thermal hysteresis in an insulating film when the insulating film is produced by oxidizing a silicon layer. CONSTITUTION: A wafer(W) with a s...
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Main Authors | , , , , |
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Format | Patent |
Language | English Korean |
Published |
16.04.2001
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE: A method for forming an insulating film and a device therefor are provided to obtain an excellent electric characteristic by reducing accumulation of thermal hysteresis in an insulating film when the insulating film is produced by oxidizing a silicon layer. CONSTITUTION: A wafer(W) with a silicon layer is sent to a vertical heat treating furnace(41), a processing atmosphere is generated, for example, at 850 deg.C, and a silicon oxide film is formed, for example, by means of wet oxidation with steam. Then heat treatment(anneal process) is performed with the wafer(W) arranged in the heat treating furnace(41) under a processing atmosphere, for example, at 850 deg.C while introducing an N2O gas for a predetermined period of time. |
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Bibliography: | Application Number: KR20000051961 |