ACTIVE MATRIX TYPE LIQUID CRYSTAL DISPLAY DEVICE

PURPOSE: To increase an aperture ratio by relatively decreasing an area of a storage capacitance part compared with an area of a pixel electrode. CONSTITUTION: Plural gate lines 7, 7' and plural source lines 13 are arranged in a matrix, mutually intersecting, on one transparent substrate 1 out...

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Bibliographic Details
Main Author KAWABATA MASARU
Format Patent
LanguageEnglish
Korean
Published 15.03.2001
Edition7
Subjects
ADVERTISING
BASIC ELECTRIC ELEMENTS
CRYPTOGRAPHY
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
DISPLAY
DISPLAYING
EDUCATION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FREQUENCY-CHANGING
LABELS OR NAME-PLATES
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
SEALS
SEMICONDUCTOR DEVICES
SIGNS
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Summary:PURPOSE: To increase an aperture ratio by relatively decreasing an area of a storage capacitance part compared with an area of a pixel electrode. CONSTITUTION: Plural gate lines 7, 7' and plural source lines 13 are arranged in a matrix, mutually intersecting, on one transparent substrate 1 out of a pair of transparent substrates 1, 2 holding a liquid crystal layer 3 in between and a thin film transistor(TFT) 11 is provided on each of the intersection points. A pixel electrode 19 is connected to the TFT 11. A storage capacitance part Cs, arranged on each of the pixel electrodes 19, is constructed with an upper side electrode 15 connected with the pixel electrode 19 via an insulation layer 10 and a lower side electrode placed opposite to each other. The insulation layer 10 is separately formed from a gate insulation layer 8 of the TFT 11. The area of the storage capacitance part Cs is relatively decreased by reducing the layer thickness of the insulation layer 10 and (or) by heightening the relative dielectric constant of the layer material to increase capacitance per unit area.
Bibliography:Application Number: KR20000034428