SYSTEM FOR DEPOSITING THIN FILM

• Main Authors: JUN, IL HWAN, PARK, BYEONG SEOK, YOON, TAE JIN, NOH, TAE HYO
• Format: Patent
• Language: English; Korean
• Published: 15.03.2001
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE: A system for depositing a thin film is provided to form a pure thin film desired in a production line regardless of a processing order of respective wafers, by connecting a thin film deposition chamber and a process gas supplying parts with a plurality of process gas supplying pipes. CONSTITUTION: A thin film deposition chamber(10) forms a thin film in a specific layer of a wafer(1). A plurality of process gas supplying parts(20,30) supply predetermined process gas to the thin film deposition chamber. A plurality of process gas supplying pipes(21,31) connect the thin film deposition chamber with the respective process gas supplying parts by one-to-one correspondence.