METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
PURPOSE: A method for manufacturing a semiconductor device is provided to make an upper edge portion of a trench round without an additional complicated process, by performing an isolating process to form the trench after an oxide accelerating material is ion-implanted into a field region. CONSTITUT...
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Main Author | |
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Format | Patent |
Language | English Korean |
Published |
05.03.2001
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE: A method for manufacturing a semiconductor device is provided to make an upper edge portion of a trench round without an additional complicated process, by performing an isolating process to form the trench after an oxide accelerating material is ion-implanted into a field region. CONSTITUTION: A pad oxide layer and a nitride layer are sequentially formed on a semiconductor substrate(100). The nitride layer and the pad oxide layer are selectively etched to expose the substrate of a portion to be used as a field region. An oxide accelerating material is ion-implanted into the resultant structure to form an impurity doping region(108) on the surface of the field region in the substrate while using the nitride layer as a mask. The exposed surface of the substrate is partially etched to form a trench by using the nitride as a mask. The nitride layer and the pad oxide layer are eliminated. A shallow trench isolation(STI)(110) is formed in the trench. A gate electrode(114) is formed in a predetermined portion of the substrate by intervening a gate insulating layer(112) so that a predetermined portion of the gate electrode overlaps the STI. |
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Bibliography: | Application Number: KR19990033052 |