METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• Main Author: KWAK, SEONG HO
• Format: Patent
• Language: English; Korean
• Published: 05.03.2001
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A method for manufacturing a semiconductor device is provided to make an upper edge portion of a trench round without an additional complicated process, by performing an isolating process to form the trench after an oxide accelerating material is ion-implanted into a field region. CONSTITUTION: A pad oxide layer and a nitride layer are sequentially formed on a semiconductor substrate(100). The nitride layer and the pad oxide layer are selectively etched to expose the substrate of a portion to be used as a field region. An oxide accelerating material is ion-implanted into the resultant structure to form an impurity doping region(108) on the surface of the field region in the substrate while using the nitride layer as a mask. The exposed surface of the substrate is partially etched to form a trench by using the nitride as a mask. The nitride layer and the pad oxide layer are eliminated. A shallow trench isolation(STI)(110) is formed in the trench. A gate electrode(114) is formed in a predetermined portion of the substrate by intervening a gate insulating layer(112) so that a predetermined portion of the gate electrode overlaps the STI.