WAVELENGTH MONITORING DEVICE FOR EXCIMER LASER LIGHT FOR EXPOSING SEMICONDUCTOR

PURPOSE: To simultaneously measure a standard laser beam and an excimer laser beam for exposing semiconductor with high accuracy and without time lag. CONSTITUTION: A wavelength monitoring device is composed of incident-side optical systems 21 and 22, which respectively forms a laser beam from an ex...

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Bibliographic Details
Main Authors SEKI TADAHIRA, KOBAYASHI TAKAO, HOTTA KAZUAKI
Format Patent
LanguageEnglish
Korean
Published 26.01.2001
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
COLORIMETRY
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT
MEASURING
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
RADIATION PYROMETRY
SEMICONDUCTOR DEVICES
TESTING
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Summary:PURPOSE: To simultaneously measure a standard laser beam and an excimer laser beam for exposing semiconductor with high accuracy and without time lag. CONSTITUTION: A wavelength monitoring device is composed of incident-side optical systems 21 and 22, which respectively forms a laser beam from an excimer laser 20 for exposing semiconductor and a standard laser beam from an He-Ne laser 10 to be incident on different areas of a single etalon 1 as divergent beams, convergent beams, or diffused beams by shifting the center axes of the beams from each other, two condensing optical systems 31 and 32 which are provided nearly coaxially with the center axes of the two laser beams transmitted through the etalon 1, and a one-dimensional array optical sensor 4, which is arranged on a rear-side focal surface P of the optical systems 31 and 32 and receives light of interference fringes generated by the two beams. The wavelength of the excimer laser beam for exposing semiconductor is calculated, by detecting the position of the interference fringes on the sensor 4.
Bibliography:Application Number: KR20000034522