INTEGRATED SEMICONDUCTOR CIRCUIT

PURPOSE: A circuit device provided with a differential amplifier is provided to lessen disadvantageous switching characteristics by preventing bulk-source effect. CONSTITUTION: An integrated semiconductor circuit is possessed of a differential amplifier, which is equipped with two input transistors(...

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Bibliographic Details
Main Author KUHNE SEBASTIAN
Format Patent
LanguageEnglish
Korean
Published 26.01.2001
Edition7
Subjects
AMPLIFIERS
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A circuit device provided with a differential amplifier is provided to lessen disadvantageous switching characteristics by preventing bulk-source effect. CONSTITUTION: An integrated semiconductor circuit is possessed of a differential amplifier, which is equipped with two input transistors(T1 and T2), a current source(30), and a load device(20). The NMOS transistors(T1 and T2) are arranged in a P conductivity-type well, and the P conductivity-type well is arranged on a P conductivity-type substrate. The well is electrically isolated from the P conductivity-type substrate. The well is equipped with a well terminal(B), and the terminal(B) is connected to a source terminal(S). A potential difference is restrained from being produced between the well thermal(B) and the source terminal(S), by which the switching characteristics of the transistors(T1 and T2) are restrained from being affected adversely, and the switching characteristics of a differential amplifier are also restrained from being affected adversely.
Bibliography:Application Number: KR20000028678