SEMICONDUCTOR MEMORY DEVICE HAVING WRITING MASKING FUNCTION AND WRITING MASKING METHOD

• Main Authors: KWAK, JIN SEOK, SIM, YONG HO
• Format: Patent
• Language: English; Korean
• Published: 15.01.2001
• Edition: 7
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

PURPOSE: A semiconductor memory device is provided to exactly perform a writing masking by precharging a plurality of writing bit lines with threshold voltage level of the inverter. CONSTITUTION: A semiconductor memory device includes a large number of writing bit lines(WBL1,WBL2,...), a large number of writing word lines, a large number of writing drivers(WD1,WD2,...), a large number of mos transistors, a large number of latch circuits, and a large number of precharge control portions. The writing drivers respectively input an input data, a writing 'enable' signal, and a writing masking signal, output the input data when the writing 'enable' signal is activated and the writing masking signal is not activated, and does not output the input data when the writing masking signal is activated. The mos transistors is gated by a signal applied to one of the writing word lines. The latch circuits provide an inverter of which driving capacity is low and an inverter of which driving capacity is high, and compose a large number of memory cells together with the mos transistors. The precharge control portions respectively input a precharge signal, and precharge one of the bit lines to a logic threshold voltage level of the inverter of which the driving capacity is high when the precharge signal is activated.