APPARATUS FOR MEASURING THICKNESS OF WAFER THIN FILM

PURPOSE: An apparatus for measuring a thickness of a wafer thin film is provided to easily exchange a reflection surface of a reflecting mirror without exchanging the reflecting mirror by radiating the beam into the wafer using a reflecting mirror having a plurality of reflecting surfaces. CONSTITUT...

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Bibliographic Details
Main Author JANG, SEO CHEOL
Format Patent
LanguageEnglish
Published 16.10.2000
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: An apparatus for measuring a thickness of a wafer thin film is provided to easily exchange a reflection surface of a reflecting mirror without exchanging the reflecting mirror by radiating the beam into the wafer using a reflecting mirror having a plurality of reflecting surfaces. CONSTITUTION: An apparatus for measuring thickness of a wafer thin film comprises a radiating device for radiating a beam into a wafer. A thick measuring device is provided to measure the thickness of the wafer thin film by detecting the reflecting beam. The radiating device includes a beam source(10) for forming a first beam and a beam reflecting portion which reflects the first beam so as to make a second beam. A beam division portion allows the second beam to be radiated into the wafer by dividing the second beam. A reflecting mirror(100-1) has a plurality of reflection surfaces(100-2) and a rotating device for rotating the reflecting mirror(100-1) so as to exchange the reflecting surfaces(100-2).
Bibliography:Application Number: KR19990010053