GATE ELECTRODE FORMING METHOD OF POLYCIDE STRUCTURE

• Main Authors: HA, IN SU, CHOI, SEUNG CHEOL, YUN, YEONG HO, JANG, SEONG DAE
• Format: Patent
• Language: English
• Published: 15.09.2000
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: Gate electrode forming method of polycide structure provides the prevention of silicide film on insulating film spacer of gate electrode. CONSTITUTION: Gate electrode forming method of polycide structure comprises a polysilicone film for a gate electrode formed on front of semiconductor substrate(100) by a common vapor deposit in between a gate oxide film on the substrate(100) defined active region and nonactive region, a poly silicone film pattern(102) is formed by etching the polysilicone film with a mask, low concentration impurity ion doped in the substrate(100) on both side of pattern(102). a silicone nitride film(SiN) formed on the substrate(100). an insulation film spacer(104) is formed on the both side wall of the conductor pattern(102), a source/drainage region(106) are formed in the substrate(100) on the both side of the insulated film spacer(104). The etching process of the polysilicone film pattern(102) are performed using selecting ratio of etching of the insulated film spacer(104) and polysilicone film, then top portion of the insulated film spacer(104) are protruded on the polysilicone film pattern(102) and the active region of the doped substrate are etched with etching of polysilicone film;