SOLID IMAGE PICK-UP DEVICE AND MANUFACTURING METHOD THEREOF

• Main Authors: CHOI, BYUNG HWAN, CHOI, IN GYU
• Format: Patent
• Language: English
• Published: 25.07.2000
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: An image pick-up device is to reduce a turn around time by forming each transfer gate by patterning one polysilicon layer and improve a reliability of the device by preventing a generation of etching remainder. CONSTITUTION: A solid image pick-up device comprises: a second conductive well(32) formed in a first conductive semiconductor substrate(31) to a predetermined depth; a first conductive BCCD(bulk charge coupled device) area(33) formed in the second conductive well to a predetermined depth; a gate insulating film(34) formed on the BCCD area; a first transfer gate(35a), a second transfer gate(35b) and a third transfer gate(35c) arranged in a predetermined distance on the gate insulating film; a second conductive impurity area formed on a surface of the BCCD area under an isolated area of the first, second and third transfer gates; a first interlayer insulating film(37) formed on the third transfer gate and having a first contact hole; and a first metal line(38) formed in one directional line type on the first contact hole and the first interlayer insulating film.