SEMICONDUCTOR IC OF SOI STRUCTURE AND FABRICATION METHOD OF THE SAME

• Main Authors: PARK, CHAN GWANG, OH, MIN ROK
• Format: Patent
• Language: English
• Published: 15.07.2000
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A semiconductor IC of SOI(Silicon On insulator) structure and a fabrication method of the same are provided to easily emit heat generated from transistors. CONSTITUTION: A semiconductor IC of SOI structure comprises a SOI substrate(100), first/second wells(27a,27b), a field oxide film(25), a gate electrode(29), source/drain areas(30a,30b), a substrate contact(31), an interlayer insulation film(32), a contact hole(h1) and source/drain/substrate electrodes(39a,39b,39c). A semiconductor substrate, an embedded insulation layer and a silicon layer are stacked on the SOI substrate(100). wells(27a,27b) are respectively formed on the semiconductor substrate and the silicon layer. The field oxide film(25) is formed on the silicon layer to define an active area. The gate electrode(29) is on the second well. The source/drain areas(30a,30b) are formed in the second well on both sides of the gate electrode. The substrate contact(31) is formed in the second well on one side of the source or drain area.