METHOD FOR FABRICATING CMOS IMAGE SENSOR

PURPOSE: A method for fabricating a CMOS image sensor is provided to lower the amount of light reflected before an arrival into a photo diode by reducing the number of layers through which a photon is incident. CONSTITUTION: In a method for fabricating a CMOS image sensor, a field oxide film(102), a...

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Bibliographic Details
Main Author AHN, GI WOONG
Format Patent
LanguageEnglish
Published 15.07.2000
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A method for fabricating a CMOS image sensor is provided to lower the amount of light reflected before an arrival into a photo diode by reducing the number of layers through which a photon is incident. CONSTITUTION: In a method for fabricating a CMOS image sensor, a field oxide film(102), a photo diode(203), an interlayer insulation film(204) and a metal wiring(205) are formed on a semiconductor substrate(201). A protection film(206) is formed on an entire surface of a resultant structure. A photo-resist pattern(207) is formed so as to open a pad region for a wire bonding and an upper region of the photo diode(203) at the same time. The protection film(206) and a part of the interlayer insulation film(204) are removed by use of the photo-resist pattern(207). After removing the photo-resist pattern, a flattened layer is formed on an entire surface of a resultant structure.
Bibliography:Application Number: KR19980061061