PHOSPHOR FOR LOW VOLTAGE AND ITS PRODUCTION
PURPOSE: A process for preparing a phosphor for low voltage by attaching fine zinc metal powders to a zinc gallate phosphor is provided which reduces a fraction defective of a film in the manufacture of a phosphor. CONSTITUTION: A process comprises the steps of mixing zinc oxide, gallium oxide and a...
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Main Authors | , , |
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Format | Patent |
Language | English Korean |
Published |
15.07.2000
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE: A process for preparing a phosphor for low voltage by attaching fine zinc metal powders to a zinc gallate phosphor is provided which reduces a fraction defective of a film in the manufacture of a phosphor. CONSTITUTION: A process comprises the steps of mixing zinc oxide, gallium oxide and a flux, calcining the mixture at 1,100 to 1,300°C, calcining the above calcined material once more, attaching zinc oxide to the calcined material, and heat treating the zinc oxide-attached material at 500 to 1,000°C under reductive atmosphere. The zinc oxide is Zno, the gallium oxide is Ga2O3, a flux is Li3PO4. The phosphor film prepared with the phosphor is excellent in film characteristics and provides uniform luminescent surface.
형광막 불량을 감소시킬 수 있으며 균일한 발광 특성을 가진 형광막을 제공할 수 있는 저전압용 형광체 제조 방법을 제공하기 위한 것으로서, 아연 산화물, 갈륨 산화물 및 융제(flux)를 혼합하고, 이 혼합물을 1100-1300℃에서 1차 소성한 후, 800-1000℃에서 2차 소성한다. 이 2차 소성된 물질에 아연 옥사이드(ZnO)를 부착시킨 후, 아연 옥사이드가 부착된 물질을 환원 분위기하, 500-1000℃에서 열처리하여 미립의 아연 금속 분말이 균일하게 부착된 형태의 저전압용 형광체를 제공한다. |
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Bibliography: | Application Number: KR19980057490 |