INTEGRATED CIRCUIT WITH DIFFERING GATE OXIDE THICKNESS AND PROCESS FOR MAKING SAME

• Main Authors: GARDNER MAKR I, HAUSE FRED N
• Format: Patent
• Language: English
• Published: 25.05.2000
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A semiconductor process for manufacturing a semiconductor substrate is provided, particularly for an MOS integrated circuit in which some transistors are processed to have thinner gate oxide than others. CONSTITUTION: A semiconductor process for a semiconductor substrate is provided. The substrate comprises a first region having p-type silicon and a second region having n-type silicon. The second region is positioned side wise to the first region. On an upper side of the substrate is provided an oxide layer. A silicon nitride layer is introduced to the oxide layer. The silicon nitride layer over the first region is removed and nitrogen impurities are introduced. And a gate dielectric layer is formed on the first and second region.