INTEGRATED CIRCUIT WITH DIFFERING GATE OXIDE THICKNESS AND PROCESS FOR MAKING SAME

PURPOSE: A semiconductor process for manufacturing a semiconductor substrate is provided, particularly for an MOS integrated circuit in which some transistors are processed to have thinner gate oxide than others. CONSTITUTION: A semiconductor process for a semiconductor substrate is provided. The su...

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Bibliographic Details
Main Authors GARDNER MAKR I, HAUSE FRED N
Format Patent
LanguageEnglish
Published 25.05.2000
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A semiconductor process for manufacturing a semiconductor substrate is provided, particularly for an MOS integrated circuit in which some transistors are processed to have thinner gate oxide than others. CONSTITUTION: A semiconductor process for a semiconductor substrate is provided. The substrate comprises a first region having p-type silicon and a second region having n-type silicon. The second region is positioned side wise to the first region. On an upper side of the substrate is provided an oxide layer. A silicon nitride layer is introduced to the oxide layer. The silicon nitride layer over the first region is removed and nitrogen impurities are introduced. And a gate dielectric layer is formed on the first and second region.
Bibliography:Application Number: KR19997001315