PHOTOELECTRIC DEVICES AND METHOD FOR MANUFACTURING PHOTOELECTRIC DEVICES

• Main Authors: OH, MIN ROK, JO, GYU SEOK
• Format: Patent
• Language: English; Korean
• Published: 15.05.2000
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: Photoelectric devices are provided to improve degrees of integration by composing a light receiving element, a luminous element, and a wave guide unit, and by using SiGe/SiGeC SUPERLATTICE technique to utilize integration of the photoelectric devices. CONSTITUTION: SiGe Photoelectric devices comprises a silicon substrate(1), a wave guide unit, a light receiving element, a luminous element, an N-silicon layer(4), a SiGe/SiGeC thin film(5), a P-silicon layer(6), many Ge implant regions(7), element separating oxide layers(20,22), P type electrodes(11), and N type electrodes. Oxide layers(2,13) are stacked on the silicon substrate. A N+ silicon layer(3) with thick thickness is formed on the wave guide in upper parts of the oxide layers, and the N+ silicon layer(3) with thin thickness is formed on the light receiving element and the luminous element. The N-silicon layer and the SiGe/SiGeC thin film are stacked on an upper part of the N+silicon layer in the light receiving element and the luminous element in order. The P-silicon layer is stacked on an upper part of the SiGeC thin film. The Ge implant regions are formed on the N-silicon layer of the light receiving element and the SiGe/SiGeC thin film. A N+ region is formed on a boundary of the light receiving element and the luminous element. The element separating oxide layers are formed on a boundary of an upper side of the wave guide and the light receiving element/the luminous element. The P type electrodes are formed on upper sides of the light receiving/the luminous element. The light receiving/the luminous element and the wave guide have regular width, and are etched up to regular thickness of the N+ silicon layer. The N type electrodes are formed on lower sides of the light receiving/the luminous element. 본 발명은 실리콘 기판상에 SiGe 양자우물구조를 이용한 적외선용 광전소자 및 그 제조방법에 관한 것이다. 지금까지는 단일소자의 구조를 벗어나지 못하고 있으나, 본 발명은 하나의 실리콘 기판에 수광소자, 발광소자 및 웨이브가이드부를 함께 구성하여 효율을 높이고, 집적도를 향상시킬수 있도록 한 광전 소자에 관한 것이다.