APPARATUS AND METHOD FOR HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION

• Main Authors: NGUYEN HUONG, BARNES MICHAEL, BERNEY BUTCH, MCMILLIN BRIAN
• Format: Patent
• Language: English; Korean
• Published: 25.04.2000
• Edition: 7
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PURPOSE: A gas distribution system for HDPCVD provides uniform, high flow rate delivery of reactant gases focused preferentially onto the substrate surface, to both maximize deposition rate on the substrate and to minimize the chamber cleaning requirements. CONSTITUTION: A plasma processing system for processes such as chemical vapor deposition includes a plasma processing chamber(140), a substrate holder(130) for supporting a substrate(120) within the processing chamber, a dielectric member(155) having an interior surface facing the substrate holder, the dielectric member forming a wall of the processing chamber, a gas supply for supplying gas to the chamber, directed towards the substrate, and an RF energy source such as a planar coil(150) which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The gas supply may comprise a primary gas ring(170) and a secondary gas ring(160) for supplying gases or gas mixtures into the chamber. The gas supply may further include injectors(180) attached to the primary gas ring which inject gas into the chamber, directed towards the substrate. The plasma processing system may also include a cooling mechanism for cooling the primary gas ring during processing. 화학기상증착과 같은 공정을 위한 본 발명의 플라즈마 공정 시스템은, 플라즈마 공정챔버(140), 공정챔버 내에서 기판(120)을 지지하기 위한 기판 홀더(130), 기판 홀더와 면하는 내부 표면을 가지고, 공정챔버의 벽을 형성하는 절연부재(155), 공정가스를 상기 챔버 안으로, 기판을 향하도록 공급하기 위한 가스공급기 및, 공정가스가 플라즈마 상태로 여기하도록 절연부재를 통과하여 챔버 안으로 RF 에너지를 유도적으로 결합하는 평판 코일(150)과 같은 RF 에너지 소스를 구비한다. 가스공급기는 가스 또는 가스 혼합물을 챔버 안으로 공급하기 위하여 주가스링(170) 및 부가스링(160)을 구비할 수 있다. 가스공급기는 가스를 챔버 안으로, 기판을 향하도록 주입하는 주가스링에 부착된 주입기들(180)을 더 구비할 수도 있다. 또한 본 플라즈마 공정 시스템은 처리 중에 주가스링을 냉각하기 위한 냉각기구를 구비할 수 있다.