SEMICONDUCTOR METALIZATION SYSTEM AND METHOD OF FORMING THE SAME

PURPOSE: Method of forming a semiconductor metalization system is provided to reduce a capacitance causing signal delay. CONSTITUTION: The method of forming the semiconductor metalization system comprises the steps of: forming a dielectric layer on a substrate; forming many via holes in the substrat...

Full description

Saved in:
Bibliographic Details
Main Author PARK, YEONG JIN
Format Patent
LanguageEnglish
Published 25.01.2000
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PURPOSE: Method of forming a semiconductor metalization system is provided to reduce a capacitance causing signal delay. CONSTITUTION: The method of forming the semiconductor metalization system comprises the steps of: forming a dielectric layer on a substrate; forming many via holes in the substrate and the dielectric layer; forming a recessed portion; placing a metalization layer on the surface of the dielectric layer; and patterning the metalization layer to form many conductive pattern. As a result, the signal speed is increased since the capacitance is reduced
Bibliography:Application Number: KR19990022670