VAPORIZER FOR SEMICONDUCTOR THIN FILM DEPOSITING

• Main Author: KIM GI NAM
• Format: Patent
• Language: English; Korean
• Published: 25.02.2022
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention is to provide a vaporizer for thin film deposition that can prevent the droplets from being sprayed into a vaporization space and solidified due to re-condensation of the vaporized droplets, thereby preventing clogging of the passage. According to the present invention, the vaporizer for thin film deposition comprises: an outer body having an opening at an upper portion, a vaporization space formed therein, and an outlet formed in a side portion through which the process gas vaporized in the vaporization space is discharged; a cover part provided in the opening to seal the vaporization space and having a through hole through which the upper and lower ends are formed; a spraying part provided in communication with the through hole to inject droplets into the vaporization space through the through hole; a first heating part provided on the outer body to radiate heating heat; and a second gas inlet part provided in the cover part and injecting a second gas supplied from the outside along an inner wall of the outer body. 본 발명의 박막증착을 위한 기화기에 따르면, 상부에 개구공이 형성되고, 내부에 기화공간이 형성되며, 측부에 상기 기화공간에서 기화된 공정 가스가 배출되는 배출구가 형성된 외부몸체; 상기 개구공에 구비되어 상기 기화공간을 밀폐시키고, 상하가 관통된 관통공이 형성된 덮개부; 상기 관통공과 연통되게 구비되어, 상기 관통공을 통해 기화공간으로 액적을 분사하는 분사부; 상기 외부몸체에 구비되어 히팅열을 발산하는 제1히팅부; 및 상기 덮개부에 구비되어, 외부로부터 공급되는 제2가스를 상기 외부몸체의 내벽을 따라 주입시키는 제2가스투입부;를 포함한다.