PLASMA CLEANING APPARATUS AND SEMICONDUCTOR PROCESS EQUIPMENT WITH THE SAME

A device for cleaning plasma comprises a metal chamber, a gate assembly, a dielectric, and a high-voltage electrode. The metal chamber is connect-installed to a vacuum tube connecting a process chamber and a vacuum pump and has a first opening. The gate assembly comprises: a gate support fixed to th...

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Bibliographic Details
Main Authors KANG WOO SEOK, LEE JINYOENG, KIM DAE WOONG, HUR MIN
Format Patent
LanguageEnglish
Korean
Published 07.07.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A device for cleaning plasma comprises a metal chamber, a gate assembly, a dielectric, and a high-voltage electrode. The metal chamber is connect-installed to a vacuum tube connecting a process chamber and a vacuum pump and has a first opening. The gate assembly comprises: a gate support fixed to the metal chamber around a first opening and having a second opening; and a gate coupled to the gate support and capable of interchanging of a first position closing the second opening and a second position opening the second opening. The dielectric is coupled to the outside of the gate support around the second opening, and the high-voltage electrode is positioned on the outer surface of the dielectric. Therefore, the present invention is capable of increasing an effect of cleaning plasma. 플라즈마 세정장치는 금속챔버, 게이트 조립체, 유전체, 및 고전압 전극을 포함한다. 금속챔버는 공정챔버와 진공펌프를 연결하는 진공관에 연결 설치되며 제1 개구를 가진다. 게이트 조립체는 제1 개구 주위의 금속챔버에 고정되며 제2 개구를 가지는 게이트 서포트와, 게이트 서포트에 결합되며 제2 개구를 닫는 제1 위치와 제2 개구를 여는 제2 위치의 상호 전환이 가능한 게이트를 포함한다. 유전체는 제2 개구 주위의 게이트 서포트의 외측에 결합되며, 고전압 전극은 유전체의 외면에 위치한다.
Bibliography:Application Number: KR20190176950