SUBSTRATE PROCESSING APPARATUS

• Main Authors: CHO BYOUNG HA, KWAK JAE CHAN, HWANG CHUL JOO
• Format: Patent
• Language: English; Korean
• Published: 08.03.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a substrate processing device, which comprises: a processing chamber providing a processing space; a substrate support unit installed to be rotatable in the processing chamber to support at least one substrate; a chamber lid covering an upper portion of the processing chamber to face the substrate support unit; and a gas injection unit installed in the chamber lid to spatially separating the processing space into first and second reactive spaces and injecting gas for inducing different deposition reaction in each of the first and second reactive spaces. 본 발명은 공정 공간을 제공하는 공정 챔버; 상기 공정 공간에 회전 가능하게 설치되어 적어도 하나의 기판을 지지하는 기판 지지부; 상기 기판 지지부에 대향되도록 상기 공정 챔버의 상부를 덮는 챔버 리드; 및 상기 챔버 리드에 설치되어 상기 공정 공간을 공간적으로 제 1 및 제 2 반응 공간으로 분리시키고, 상기 제 1 및 제 2 반응 공간 각각에서 서로 다른 증착 반응을 유도하기 위한 가스를 분사하는 가스 분사부를 포함하는 기판처리장치에 관한 것이다.