ITO ITO THERMOELECTRIC MATERIAL USING MULTILAYER STRUCTURE CONSIST OF ITO AND HYDROGEN DROPPED ITO AND METHOD FOR MANUFACTURING THE SAME

• Main Authors: KIM SEO HAN, KIM SE HYEON, PARK SUNG MIN, JANG HYE MIN, SONG PUNG KEUN
• Format: Patent
• Language: English; Korean
• Published: 07.01.2021
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a thermoelectric material using a multilayer structure consisting of ITO and hydrogen dropped ITO, and a manufacturing method thereof. According to one aspect of the present invention, the method of manufacturing thermoelectric material using ITO and a multilayer structure of hydrogen includes the steps of: forming an ITO layer on a substrate by sputtering using argon gas as a sputtering gas; forming an amorphous layer by sputtering using an argon-hydrogen mixture gas as the sputtering gas on the ITO layer; and forming the ITO layer by sputtering using argon gas as the sputtering gas on the amorphous layer. The step of forming the amorphous layer on the ITO layer and the step of forming the ITO layer on the amorphous layer are repeated to form the multilayer structure. There is an effect of providing the thermoelectric material with reduced thermal conductivity. 본 발명은 본 발명은 ITO와 수소 도핑된 ITO로 이루어진 다층 구조를 이용한 열전소재 및 그 제조방법에 관한 것으로 본 발명의 일면에 따른 ITO와 수소의 다층 구조를 이용한 열전소재 제조방법은 기판상에 아르곤 가스를 스퍼터링 가스로 하여 스퍼터링법에 의해 ITO층을 형성하는 단계, ITO층 상에 아르곤-수소 혼합가스를 스퍼터링 가스로 하여 스퍼터링법에 의해 비정질층을 형성하는 단계 및 비정질층 상에 아르곤 가스를 스퍼터링 가스로 하여 스퍼터링법에 의해 ITO층을 형성하는 단계를 포함하고, ITO층 상에 비정질층을 형성하는 단계와 비정질층 상에 ITO층을 형성하는 단계를 반복하여 다층 구조를 형성한다.