POLISHING PAD AND MANUFACTURING METHOD THEREOF

An embodiment relates to a polishing pad used in a chemical mechanical planarization (CMP) process of a semiconductor, and a manufacturing method thereof. The polishing pad includes a groove and a round part, thereby preventing defects on a wafer surface, wherein the defects may occur by a groove of...

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Bibliographic Details
Main Authors HEO HYE YOUNG, KIM KYU HUN, AHN JAEIN, YUN JONG WOOK, YUN SUNGHOON, SEO JANG WON
Format Patent
LanguageEnglish
Korean
Published 07.06.2019
Subjects
DRESSING OR CONDITIONING OF ABRADING SURFACES
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
TOOLS FOR GRINDING, BUFFING, OR SHARPENING
TRANSPORTING
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Summary:An embodiment relates to a polishing pad used in a chemical mechanical planarization (CMP) process of a semiconductor, and a manufacturing method thereof. The polishing pad includes a groove and a round part, thereby preventing defects on a wafer surface, wherein the defects may occur by a groove of a polishing layer during a real CMP process. 실시예는 반도체의 화학적 기계적 평탄화(chemical mechanical planarization, CMP) 공정에 사용되는 연매패드 및 이의 제조방법에 관한 것으로서, 상기 연마패드는 그루브와 라운드부를 포함하여, 실제 CMP 공정 중 연마층의 그루브에 의해 발생할 수 있는 웨이퍼 표면의 결함을 방지하는 효과가 있다.
Bibliography:Application Number: KR20170164169