CRUCIBLE AND GROWING SAPPHIRE SINGLE CRYSTAL

• Main Authors: MOON, SUNG HWAN, LEE, HUI CHOON, CHOI, YI SIK, KIM, JUN HWAN
• Format: Patent
• Language: English; Korean
• Published: 07.08.2018
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A crucible for sapphire single crystal growth of the present invention is a crucible for growing a sapphire single crystal by heating and cooling a sapphire single crystal seed and an alumina raw material, which is filled with a sapphire single crystal seed and an alumina raw material. The crucible...