CRUCIBLE AND GROWING SAPPHIRE SINGLE CRYSTAL

• Main Authors: MOON, SUNG HWAN, LEE, HUI CHOON, CHOI, YI SIK, KIM, JUN HWAN
• Format: Patent
• Language: English; Korean
• Published: 07.08.2018
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A crucible for sapphire single crystal growth of the present invention is a crucible for growing a sapphire single crystal by heating and cooling a sapphire single crystal seed and an alumina raw material, which is filled with a sapphire single crystal seed and an alumina raw material. The crucible can be reused by allowing the shrinkage direction of the crucible opposite to be opposite to the shrinking direction of the sapphire single crystal during cooling so that the sapphire single crystal can be separated without damaging the crucible. 본 발명의 사파이어 단결정 성장용 도가니는 사파이어 단결정 시드 및 알루미나 원료가 장입되며, 사파이어 단결정 시드 및 알루미나 원료를 가열 및 냉각하여 사파이어 단결정을 성장시키는 도가니이고, 상기 도가니의 손상없이 사파이어 단결정을 분리할 수 있도록 냉각시 도가니의 수축방향이 사파이어 단결정의 수축방향과 서로 반대로 이루어지도록 하여 도가니의 재사용이 가능하다.