Benzene gas sensors using catalytic overlayer structured oxide semiconductors and fabrication method thereof

The present invention relates to an oxide semiconductor type gas sensor and a manufacturing method thereof. More specifically, one or more kinds of catalytic layers selected from Co_3O_4, Cr_2O_3, MnO_2, and V_2O_5 are formed on a gas sensitive layer comprising Pd-loaded SnO_2 yolk shell spheres, th...

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Bibliographic Details
Main Authors LEE, JONG HEUN, JEONG, SEONG YONG, AHN, KONG HUN, CHUNG, GUI SU, KIM, TAE HYUNG, YOON, JI WOOK
Format Patent
LanguageEnglish
Korean
Published 02.01.2018
Subjects
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
TESTING
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Summary:The present invention relates to an oxide semiconductor type gas sensor and a manufacturing method thereof. More specifically, one or more kinds of catalytic layers selected from Co_3O_4, Cr_2O_3, MnO_2, and V_2O_5 are formed on a gas sensitive layer comprising Pd-loaded SnO_2 yolk shell spheres, thus being able to detect benzene, which is indoor environment gas having an adverse effect on humans, with high sensitive and high selectivity. 본 발명은 산화물 반도체형 가스센서 및 그 제조방법에 관한 것으로, 더욱 상세하게는 팔라듐(Pd)이 첨가된 산화주석(SnO) 난황구조 미분말(Pd-loaded SnOyolk shell spheres)로 이루어진 가스 감응층 상에 산화코발트(CoO), 산화크롬(CrO), 산화망간(MnO), 산화바나듐(VO) 중에서 선택되는 1종 이상의 촉매층을 형성함으로써 인체에 악영향을 주는 실내 환경 가스인 벤젠을 고감도, 고선택적으로 검지할 수 있는 가스 센서 및 그 제조방법에 관한 것이다.
Bibliography:Application Number: KR20160155104