PHOTODIODE AND METHOD OF MANUFACTURING THE SAME
The present invention relates to a photosensitive semiconductor device and to a method for producing the same. The photosensitive semiconductor device comprises: an InGaAs etch stop layer (120), an InP electrode layer (130), an InGaAs active layer (140), and an InP cover layer (150) which are formed...
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Main Authors | , , , , |
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Format | Patent |
Language | English Korean |
Published |
23.05.2017
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention relates to a photosensitive semiconductor device and to a method for producing the same. The photosensitive semiconductor device comprises: an InGaAs etch stop layer (120), an InP electrode layer (130), an InGaAs active layer (140), and an InP cover layer (150) which are formed at the top of an InP substrate (110); an activation region (160) and guard ring regions (170, 170a) which are formed on the InP cover layer (150); and a surface protection film (180) and a top electrode layer (190) which are formed at the top of the InP cover layer (150). The present invention has improved crosstalk properties compared to a conventional photosensitive semiconductor device, and a guard ring region can be produced through a simple process using a wet-etching single diffusion process.
본 발명은 감광성 반도체 소자 및 그 제조방법에 관한 것으로, InP 기판(110)의 상부에 형성한 InGaAs 식각멈춤층(120), InP 전극층(130), InGaAs 활성층(140), InP 덮개층(150)을 포함하고, 상기 InP 덮개층(150)에 형성한 활성화 영역(160) 및 가드링 영역(170,170a)과, 상기 InP 덮개층(150)의 상부에 형성한 표면 보호막(180) 및 상부 전극층(190)을 포함한다. 본 발명은 기존의 감광성 반도체 소자보다 개선된 크로스토크 특성을 가지며, 습식 식각을 통한 단일 확산 공정을 통해 간단한 공정으로 가드링 영역을 제작할 수 있는 이점이 있다. |
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Bibliography: | Application Number: KR20160041760 |