Pellicle structure for extreme ultraviolet lithography

• Main Authors: PARK, SUNG MO, AN, IL SIN, KO, KI HO, KIM, IN SEON, AHN, JIN HO, OH, HYE KEUN, LEE, SUNG GYU, KIM, GUK JIN, PARK, JIN GOO, LEE, JUNG HWAN
• Format: Patent
• Language: English; Korean
• Published: 10.03.2017
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

A pellicle structure for extreme ultraviolet lithography may be provided, and the pellicle structure for extreme ultraviolet lithography comprises: a first protective layer which is disposed on a mask, and includes a silicon carbide (SiC); a core layer including a zirconium (Zr) on the first protective layer; a second protective layer including a silicon nitride (Si_3N_4) on the core layer; and a third protective layer including a silicon carbide (SiC) on the second protective layer. 마스크 상에 배치되고, 실리콘 카바이드(SiC)를 포함하는 제1 보호층(first protective layer), 상기 제1 보호층 상의 지르코늄(Zr)을 포함하는 코어층(core layer), 상기 코어층 상의 실리콘 나이트라이드(SiN)를 포함하는 제2 보호층(second protective layer), 및 상기 제2 보호층 상의 실리콘 카바이드(SiC)를 포함하는 제3 보호층(third protective layer)을 포함하는 극자외선 리소그래피용 펠리클 구조체가 제공될 수 있다.