FORMING METHOD OF TIN OXIDE THIN FILM ON A CERAMIC SUBSTRATE

• Main Authors: BAEK, CHANG YONG, CHO, SUNG WOON, KANG, DOO WON, KIM, JUN HYUN, KIM, CHANG KOO, KIM, HYUN CHANG
• Format: Patent
• Language: English; Korean
• Published: 21.10.2015
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a method for forming a tin oxide thin film on a ceramic substrate, and, more specifically, to a method for forming a tin oxide thin film on a ceramic substrate, which can improve electrical characteristics such as surface resistance and electrical conductivity by increasing the binding power and the density of the tin oxide thin film. 본 발명은 세라믹 기판 상에 산화주석 박막을 형성하는 방법에 관한 것으로, 더욱 상세하게는 산화주석 박막의 결합력, 밀도를 높임으로써, 표면저항, 전기전도도 등과 전기적 특성을 향상시킬 수 있는 세라믹 기판 상에 산화주석 박막을 형성하는 방법에 관한 것이다.