FORMING METHOD OF TIN OXIDE THIN FILM ON A CERAMIC SUBSTRATE
The present invention relates to a method for forming a tin oxide thin film on a ceramic substrate, and, more specifically, to a method for forming a tin oxide thin film on a ceramic substrate, which can improve electrical characteristics such as surface resistance and electrical conductivity by inc...
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Main Authors | , , , , , |
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Format | Patent |
Language | English Korean |
Published |
21.10.2015
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention relates to a method for forming a tin oxide thin film on a ceramic substrate, and, more specifically, to a method for forming a tin oxide thin film on a ceramic substrate, which can improve electrical characteristics such as surface resistance and electrical conductivity by increasing the binding power and the density of the tin oxide thin film.
본 발명은 세라믹 기판 상에 산화주석 박막을 형성하는 방법에 관한 것으로, 더욱 상세하게는 산화주석 박막의 결합력, 밀도를 높임으로써, 표면저항, 전기전도도 등과 전기적 특성을 향상시킬 수 있는 세라믹 기판 상에 산화주석 박막을 형성하는 방법에 관한 것이다. |
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Bibliography: | Application Number: KR20140073448 |