Vertical type tunneling semiconductor device

The present invention relates to a vertical tunneling semiconductor device. The vertical tunneling semiconductor device according to the embodiment of the present invention includes a conductive layer, a first non-conductive layer which is formed on the conductive layer, and a graphene layer which i...

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Bibliographic Details
Main Author CHOI, JAE WU
Format Patent
LanguageEnglish
Korean
Published 22.10.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention relates to a vertical tunneling semiconductor device. The vertical tunneling semiconductor device according to the embodiment of the present invention includes a conductive layer, a first non-conductive layer which is formed on the conductive layer, and a graphene layer which is formed on the non-conductive layer. The non-conductive layer includes a shallow trap or a deep trap.
Bibliography:Application Number: KR20130054639