Graphene growth method using semiconductor

• Main Author: CHOI, JAE WU
• Format: Patent
• Language: English; Korean
• Published: 08.10.2014
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS THEREOF; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A graphene growth method using semiconductor of the present invention comprises a step of preparing a structure including a conductor layer; an insulator layer arranged on the conductor layer; a non-crystalline carbon layer disposed on the insulator layer, and a semiconductor layer arranged on the phase of the carbon layer; and a step of growing the carbon layer into a graphene by heat treating the structure while applying voltage between the conductor layer and the semiconductor layer.