Graphene growth method using semiconductor
A graphene growth method using semiconductor of the present invention comprises a step of preparing a structure including a conductor layer; an insulator layer arranged on the conductor layer; a non-crystalline carbon layer disposed on the insulator layer, and a semiconductor layer arranged on the p...
Saved in:
Main Author | |
---|---|
Format | Patent |
Language | English Korean |
Published |
08.10.2014
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A graphene growth method using semiconductor of the present invention comprises a step of preparing a structure including a conductor layer; an insulator layer arranged on the conductor layer; a non-crystalline carbon layer disposed on the insulator layer, and a semiconductor layer arranged on the phase of the carbon layer; and a step of growing the carbon layer into a graphene by heat treating the structure while applying voltage between the conductor layer and the semiconductor layer. |
---|---|
Bibliography: | Application Number: KR20130048775 |