LIGHT EMITTING DIODE HAVING MIXED STRUCTURE

• Main Authors: KIM, YANG GYEOM, LEE, DONG JIN, O, BEOM HOAN
• Format: Patent
• Language: English; Korean
• Published: 11.09.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention relates to a light emitting diode which can improve luminous efficiency by enhancing uniformity of current distribution between an n type electrode and a p type electrode thereof and reducing an internal reflection and reabsorption phenomenon thereof. To this end, the present invention provides the light emitting diode with a hybrid structure including a base substrate (210); a main substrate layer (25) disposed on the upper side of the base substrate (210) to form a p-n hetero-junction structure of a semiconductor and having an n type electrode pad (250) and a p type electrode pad (260) connected to an external power source; a transparent electrode (270) forming an upper part of the main substrate layer (25); and a plurality of micro disks (200) formed with a micro size at the upper side of the transparent electrode (270) which is between an n type electrode finger (252) extending from the n type electrode pad (250) and a p type electrode finger (262) extending from the p type electrode pad (260), wherein the micro disks (200) include a bridge (300) for connecting the inner center of a circumference and a pair of micro disk recesses (410, 411) engraved to have a shape partitioned by the bridge (300).