LIGHT EMITTING DIODE HAVING MIXED STRUCTURE

The present invention relates to a light emitting diode which can improve luminous efficiency by enhancing uniformity of current distribution between an n type electrode and a p type electrode thereof and reducing an internal reflection and reabsorption phenomenon thereof. To this end, the present i...

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Bibliographic Details
Main Authors KIM, YANG GYEOM, LEE, DONG JIN, O, BEOM HOAN
Format Patent
LanguageEnglish
Korean
Published 11.09.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention relates to a light emitting diode which can improve luminous efficiency by enhancing uniformity of current distribution between an n type electrode and a p type electrode thereof and reducing an internal reflection and reabsorption phenomenon thereof. To this end, the present invention provides the light emitting diode with a hybrid structure including a base substrate (210); a main substrate layer (25) disposed on the upper side of the base substrate (210) to form a p-n hetero-junction structure of a semiconductor and having an n type electrode pad (250) and a p type electrode pad (260) connected to an external power source; a transparent electrode (270) forming an upper part of the main substrate layer (25); and a plurality of micro disks (200) formed with a micro size at the upper side of the transparent electrode (270) which is between an n type electrode finger (252) extending from the n type electrode pad (250) and a p type electrode finger (262) extending from the p type electrode pad (260), wherein the micro disks (200) include a bridge (300) for connecting the inner center of a circumference and a pair of micro disk recesses (410, 411) engraved to have a shape partitioned by the bridge (300).
Bibliography:Application Number: KR20130088949