CMOS IMAGE SENSOR

A CMOS image sensor is disclosed. The CMOS image sensor includes a photodiode area generating and accumulating a charge corresponding to incident light by being formed in a P conductive semiconductor substrate and an OFD active area formed in the P conductive semiconductor substrate to be separated...

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Bibliographic Details
Main Author SHIN, HYUN TAEK
Format Patent
LanguageEnglish
Korean
Published 12.02.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
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Summary:A CMOS image sensor is disclosed. The CMOS image sensor includes a photodiode area generating and accumulating a charge corresponding to incident light by being formed in a P conductive semiconductor substrate and an OFD active area formed in the P conductive semiconductor substrate to be separated from the photodiode area to the side and discharging the excessive charges generated in the photodiode area to the outside. An NPN transistor can be formed in the active photodiode area, the P conductive semiconductor substrate, and the OFD active area.
Bibliography:Application Number: KR20120099792