AN IMAGE SENSOR

• Main Authors: LEE, JU IL, HA, MAN LYUN
• Format: Patent
• Language: English; Korean
• Published: 20.01.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An embodiment comprises; a photo-diode area formed on a first conductive semiconductor substrate; a second conductive first floating diffusion area which is separately formed on the first conductive semiconductor substrate with the photo-diode area; a second conductive second floating diffusion area which is separately formed with the second conductive first floating diffusion area; a first gate formed on a semiconductor substrate between the photo-diode area and the second conductive first floating diffusion area; and a second gate formed on the first conductive semiconductor substrate between the second conductive first floating diffusion area and the second conductive second floating diffusion area. The size of a bonding area of the first conductive semiconductor substrate and the second conductive first floating diffusion area can be bigger than the size of a bonding area of the first conductive semiconductor substrate and the second conductive second floating diffusion area.