METHOD FOR MANUFACTURING A LIGHT EMITTING DIODE HAVING A REFLECTIVE LAYER USING A MIDDLE LAYER, AND THE LIGHT EMITING DIODE

PURPOSE: A method for manufacturing a light emitting diode having a reflective layer using a middle layer, and the light emitting diode are provided to improve thermal stability by preventing the agglomeration of an Ag based reflection layer. CONSTITUTION: An active layer is formed between an n-type...

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Bibliographic Details
Main Authors SEONG, TAE YEON, YUM, WOONG SUN, JEON, JOON WOO
Format Patent
LanguageEnglish
Korean
Published 07.08.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A method for manufacturing a light emitting diode having a reflective layer using a middle layer, and the light emitting diode are provided to improve thermal stability by preventing the agglomeration of an Ag based reflection layer. CONSTITUTION: An active layer is formed between an n-type semiconductor layer and a p-type semiconductor layer. A reflection layer reflects the light generated from the active layer. A first reflection layer (110) is formed. A middle layer (120) is formed on the first reflection layer. A second reflection layer (130) is formed on the middle layer. [Reference numerals] (110) First reflection layer; (120) Middle layer; (130) Second reflection layer; (200) Semiconductor layer
Bibliography:Application Number: KR20120067148