FIELD EFFECT TRANSISTOR TYPE SENSOR

• Main Authors: SUNG, MIN, SHIN, KUM JAE, JAMES EDWARD WEST, JE, YUB, MOON, WON KYU
• Format: Patent
• Language: English; Korean
• Published: 31.07.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A field effect transistor type sensor is provided to obtain the sensitivity of a low frequency domain by maintaining electrical impedance with a low level. CONSTITUTION: A source part (110) and a drain part (120) are formed on a substrate. A channel part (130) is formed between the source p...