FIELD EFFECT TRANSISTOR TYPE SENSOR

PURPOSE: A field effect transistor type sensor is provided to obtain the sensitivity of a low frequency domain by maintaining electrical impedance with a low level. CONSTITUTION: A source part (110) and a drain part (120) are formed on a substrate. A channel part (130) is formed between the source p...

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Bibliographic Details
Main Authors SUNG, MIN, SHIN, KUM JAE, JAMES EDWARD WEST, JE, YUB, MOON, WON KYU
Format Patent
LanguageEnglish
Korean
Published 31.07.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A field effect transistor type sensor is provided to obtain the sensitivity of a low frequency domain by maintaining electrical impedance with a low level. CONSTITUTION: A source part (110) and a drain part (120) are formed on a substrate. A channel part (130) is formed between the source part and the drain part. A membrane (200) is separated from the channel part and is located on the upper side of the substrate. An electrostatic charge member (300) is separated from the channel part and is formed on the lower side of the membrane. An electrostatic member generates an electric field.
Bibliography:Application Number: KR20120050418