P-TYPE TRANSPARENT OXIDE SEMICONDUCTOR, TRANSISTOR HAVING THE SAME, AND MANUFACTURE METHOD OF THE SAME

PURPOSE: A p-type transparent oxide semiconductor, a transistor having the same, and a method for manufacturing the same are provided to have high transmittance necessary for transparent display production and to be used for various semiconductor devices including a transparent flexible substrate. C...

Full description

Saved in:
Bibliographic Details
Main Authors NO, YOUNG SOO, CHOI, WON KOOK, OH, YOUNG JEI, LEE, CHIL HYOUNG, LEE, JEON KOOK
Format Patent
LanguageEnglish
Korean
Published 11.07.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PURPOSE: A p-type transparent oxide semiconductor, a transistor having the same, and a method for manufacturing the same are provided to have high transmittance necessary for transparent display production and to be used for various semiconductor devices including a transparent flexible substrate. CONSTITUTION: An insulating layer (11) is formed on a gate substrate (10). A channel layer (12) including a p-type transparent oxide semiconductor is formed on the insulating layer. The p-type transparent oxide semiconductor includes a tin oxide compound. A source electrode (13) and a drain electrode (14) are formed on the insulating layer. The source electrode is separated from the drain electrode. [Reference numerals] (10) Gate substrate; (11) Insulating layer; (12) Channel layer; (13) Source electrode; (14) Drain electrode
Bibliography:Application Number: KR20120052679