PIEZOELECTRIC ENERGY HARVESTOR BY PASSIVATION EFFECT

PURPOSE: A piezoelectric energy harvestor by a passivation effect is provided to increase power by depositing an organic/inorganic n-type material in an inorganic material p- type semiconductor piezoelectric material and to secure the self operation of a device. CONSTITUTION: A lower electrode, a pi...

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Main Authors SEUNG, WAN CHUL, KIM, SANG WOO, KIM, KOWN HO, LEE, KEUN YOUNG, LEE, JU HYUCK
Format Patent
LanguageEnglish
Korean
Published 09.05.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A piezoelectric energy harvestor by a passivation effect is provided to increase power by depositing an organic/inorganic n-type material in an inorganic material p- type semiconductor piezoelectric material and to secure the self operation of a device. CONSTITUTION: A lower electrode, a piezoelectric material layer, a second material layer, and an upper electrode are successively formed on a substrate. The piezoelectric material layer is made of an n-type material. A first material layer is made of a p-type material. The second material layer is made of the mixture of the n-type material and the p-type material. The upper electrode and the lower electrode are formed to induce electric energy.
Bibliography:Application Number: KR20120016277