DRY ETCHING METHOD OF WAFER BACKSIDE USING REMOTE PLASMA GENERATOR

PURPOSE: A method for dry-etching a wafer back side using a remote plasma generator is provided to dry-etch only a wafer back side by not giving a damage to a device formed in a front side of a wafer by supplying radial, which is generated by using a remote plasma generator having high efficiency, t...

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Bibliographic Details
Main Authors SEO, JUNG HYUK, KIM, SHEUNG KI, JANG, DUCK HYUN
Format Patent
LanguageEnglish
Korean
Published 05.04.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A method for dry-etching a wafer back side using a remote plasma generator is provided to dry-etch only a wafer back side by not giving a damage to a device formed in a front side of a wafer by supplying radial, which is generated by using a remote plasma generator having high efficiency, to an inside of a reactor. CONSTITUTION: A wafer(10) is settled on a wafer chuck(20). Radial is generated by using a remote plasma generator(30). The radial is provided to a reactor through an air diffuser. A wafer back side(12) is dry-etched by supplying the radial to the inside of the reactor. An inactive gas is inserted between a front side(11) of the wafer and the wafer chuck.
Bibliography:Application Number: KR20110059609